transistors 1 publication date: october 2004 sjc00293bed MSG33002 sige hbt type for low-noise rf amplifier features ? compatible between high breakdown voltage and high cutoff fre- quency ? low-noise, high-gain amplification ? suitable for high-density mounting and downsizing of the equip- ment for ultraminiature package 0.8 mm 1.2 mm (height 0.52 mm) absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 9 v, i e = 01 a collector-emitter cutoff current (base open) i ceo v ce = 6 v, i b = 01 a emitter-base cutoff current (collector open) i ebo v eb = 1 v, i c = 01 a forward current transfer ratio h fe v ce = 3 v, i c = 6 ma 100 220 ? transition frequency f t v ce = 3 v, i c = 20 ma, f = 2 ghz 19 ghz forward transfer gain ? s 21e ? 2 v ce = 3 v, i c = 20 ma, f = 2 ghz 7.5 10.5 db noise figure nf v ce = 3 v, i c = 6 ma, f = 2 ghz 1.4 2.0 db collector output capacitance c ob v cb = 3 v, i e = 0, f = 1 mhz 0.4 0.7 pf (common base, input open circuited) electrical characteristics t a = 25 c 3 c unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 9v collector-emitter voltage (base open) v ceo 6v emitter-base voltage (collector open) v ebo 1v collector current i c 60 ma collector power dissipation* p c 100 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c marking symbol: 5t note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. note) * : copper plate at the collector is 5.0 cm 2 on substrate at 10 mm 12 mm 0.8 mm. 1: base 2: emitter 3: collector sssmini3-f1 package 1.20 0.05 0.52 0.03 0 to 0.01 0.15 max. 5? 0.15 min. 0.80 0.05 0.15 min. 0.33 (0.40) (0.40) 12 3 5? 0.80 0.05 1.20 0.05 +0.05 ?.02 0.10 +0.05 ?.02 0.23 +0.05 ?.02
MSG33002 2 sjc00293bed f t ? i c c ob ? v cb g p ? i c p c ? t a i c ? v ce h fe ? i c ? s 21e ? 2 ? i c nf ? i c s 11 , s 22 0 40 120 80 0 120 40 80 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 02 46 0 12 4 8 collector current i c ( ma ) collector-emitter voltage v ce ( v ) i b = 80 a 70 a 50 a 40 a 30 a 20 a 10 a 60 a 0.01 1 0.1 10 100 0 120 160 40 80 collector current i c ( ma ) forward current transfer ratio h fe v ce = 3 v 1 10 100 0 25 5 10 15 20 collector current i c ( ma ) transition frequency f t ( ghz ) v ce = 3 v f = 2 ghz 024 6 0.1 0.6 0.7 0.8 0.2 0.3 0.4 0.5 collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) f = 1 mhz 0.1 10 1 100 ?10 ?5 0 5 10 15 collector current i c ( ma ) power gain g p ( db ) v ce = 3 v f = 2 ghz 1 10 100 0 12 4 8 collector current i c ( ma ) forward transfer gain ? s 21e ? 2 ( db ) v ce = 3 v f = 2 ghz 0.1 10 1 100 0 6 2 4 collector current i c ( ma ) noise figure nf ( db ) v ce = 3 v f = 2 ghz v ce = 3 v i c = 10 ma 0.5 0 1.0 2.0 s 11 s 22 ? 2.0 ? 1.0 ? 0.5 1
MSG33002 3 sjc00293bed ? s 21e ? 2 , ? s 12e ? 2 ? f 0123 ?40 ?20 0 20 40 ? s 21e ? 2 frequency f (ghz) forward transfer coefficient ? s 21e ? 2 , reverse transfer coefficient ? s 12e ? 2 (db) ? s 12e ? 2
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep
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